MESOSCOPE Success to locate defect via EBIRCH

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MESOSCOPE Success to locate defect via EBIRCH

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  • 2020-09-04
MESOSCOPE Success to locate defect via EBIRCH

 

Recently, MESOSCOPE successes to use Kleindiek PS8 system and Mesoscope's tips to locate defect by EBIRCH at Laboratory of Mesoscope Technology.

First, we check the current between gate to source and the current is slightly lower than customer’s test data.

      

 

Then, we check the current between gate to drain and gate to bulk. The two IV curves are diode curve. These mains that the defect is leakage defect from gate to source and pass by spacer or the gate oxide above low doped (source side).

   

 

We use EBIRCH to find the defect. We could see clearly that the red circle is the location of defect which is on the right-up side.

 

SEM EBIRCH Overlay

     

After that, we do EDX mapping and find out there are As and P elements in this location.

     

Mesoscope uses CR100B(curve rate 100nm) for the measurement. CR100B is suitable for the technology between 100nm to 130nm. All probes are pre-cleaned and could be used directly.

To see more information, please check our website: http://www.mesoscope.com.tw/product/6/28 and http://www.mesoscope.com.tw/product/7/52 

 

  Following is a brief description about E-Beam application 

Technique

Method

Object

Defect Sorts

Full Name of Technique

EBAC

absorb

Metal Line

open, short

Electron Beam Absorbed Current

EBIC

e-p pair

p-n junction

p-n junction

Electron Beam Induced Current

EBIRCH

Heat

Different material

short

Electron Beam Induced Resistance Change

RCI

Absorb

Metal line

Local High R

Resistive Contrast Imaging

 

  Feel free to contact with MESOSCOPE, if there is any idea or inquiry: +886-3-666-1059